FGPF120N30 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 300V, 120A PDP IGBT

FGPF120N30
300V, 120A PDP IGBT
Features
• High Current Capability
• Low saturation voltage : V_CE(sat) = 1.1 V @ I_C = 25A
• High input impedance
• Fast switching
Application
PDP SYSTEM
January 2006
General Description
Employing Unified IGBT Technology, Fairchild's PWD series of
IGBTs provides low conduction and switching loss. The PWD
series offers the optimum solution for PDP applications where
low condution loss is essential.
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{C_pulse (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulse Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T_C = 25°C
@ T_C = 25°C
@ T_C = 25°C
@ T_C = 100°C
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes
(1) Repetitive test , pulse width=100usec , Duty=0.5
* Ic_pulse limited by max Tj
FGPF120N30
300
± 20
120
180 *
60
24
-55 to +150
-55 to +150
300
Typ.
Max.
--
2.1
--
62.5
Units
V
V
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FGPF120N30 Rev. A
www.fairchildsemi.com