FGPF120N30 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 300V, 120A PDP IGBT

Figure 7. Saturation Voltage vs. Vge
6
Com m on Em itter
T = 125^oC
C
5
4
3
120A
2
50A
25A
1
12.5A
0
6
8
10
12
14
16
18
20
Gate - Em itter Voltage, V [V ]
GE
Figure 8. Capacitance Characteristics
Cies
1000
Coes
Cres
100 _{Common Em itter}
V = 0V, f = 1MHz
GE
T = 25oC
C
0
5
10
15
20
25
30
Collector-Emitter Voltage, V [V]
CE
Figure 9. Gate Charge
15
Com m on Em itter
R = 10 ohm
L
T = 25oC
C
10
Vcc = 200V
5
0
0
20
40
60
80
100
120
Gate Charge, Q [nC]
g
Figure 11. Turn-On Characteristics vs.
Gate Resistance
1000
Com mon Emitter
V = 200V, V = 15V
CC
GE
I = 25A
C
T = 25oC
C
T = 125oC
C
tr
100
td(on)
10
1
10
100
Gate Resistance, R [Ω ]
G
Figure 10. SOA Characteristics
Ic M A X (P u ls e d )^*
Ic M A X (C ontinuous)
100
10
D C O peration
50µs
100µs
1m s
1
S ingle N onrepetitive
P ulse T c = 25^oC
Curves m ust be derated
linearly w ith increase
in tem perature
0.1
0.1
1
10
100
C o lle cto r - E m itte r V o lta ge , V [V ]
CE
1000
Figure 12. Turn-Off Characteristics
Gate Resistance
1000
Com m on Em itter
V = 200V, V = 15V
CC
GE
I = 25A
C
T = 25oC
C
T = 125oC
C
tf
tf
100
td(off)
1
10
100
Gate Resistance, R [Ω ]
G
4
FGPF120N30 Rev. A
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