FGL40N150D Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Electrical Characteristics of the IGBT

16
Common Emitter
14
R
L
=
15Ω,
V
CC
=
600V
T = 25oC
C
12
10
8
6
4
2
0
0
25
50
75
100
125
150
Gate Charge, Qg [nC]
Fig 13. Gate Charge Characteristics
500
450
400
350
300
250
200
150
100
50
0
0
IF = 10A
50
100
150
200
250
300
di/dt [A/us]
Fig 15. Typical T_rr vs. di/dt
100 ^{Ic MAX (Pulsed)}
Ic MAX (Continuous)
50µs
100µs
10
1ms
DC Operation
1
Single Nonrepetitive
Pulse Tc = 25^oC
0.1 _{Curves must be derated}
linearly with increase
in temperature
0.01
0.1
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Fig 14. SOA Characteristics
300
270
240
210
di/dt = 50A/us
180
100A/us
150
200A/us
120
90
60
30
0 1 2 3 4 5 6 7 8 9 10
Forward Current, IF [A]
Fig 16. Typical T_rr vs. Forward Current
1000
100
10
T = 125℃
C
1
100℃
0.1
25℃
0.01
1E-3
300.0
600.0
900.0
1.2k
1.5k
Reverse Voltage, V _R [V]
Fig 17. Reverse Current vs. Reverse Voltage
©2002 Fairchild Semiconductor Corporation
100
10
T =125℃
C
25℃
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Voltage, V _F [V]
Fig 18. Typical Forward Voltage Drop
vs. Forward Current
FGL40N150D Rev. A1