FGL40N150D Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Electrical Characteristics of the IGBT

FGL40N150D
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The FGL40N150D is designed for induction heating
applications.
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 3.5 V @ I_C = 40A
• High input impedance
• Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
GC E
TO-264
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGL40N150D
1500
± 25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.625
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1