FGL40N150D Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Electrical Characteristics of the IGBT

1000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
tf
td(off)
100
10 20 30 40 50 60 70 80 90
Collector Current, I_C [A]
Fig 7. Turn-Off Characteristics vs.
Collector Current
10000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
1000 ^Eoff
Eon
100
10 20 30 40 50 60 70 80 90
Collector Current, I_C [A]
Fig 9. Switching Loss vs. Collector Current
1000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
10 20 30 40 50 60 70 80 90
Collector Current, I_C [A]
Fig 8. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I_C = 40A
T = 25oC
C
T_C = 125^oC
tf
100
td(off)
10
100
Gate Resistance, R_G [Ω]
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I_C = 40A
T_C = 25^oC
T = 125oC
C
100
tr
td(on)
10
10
100
Gate Resistance, R_G [Ω]
Fig 11. Turn-On Characteristics vs.
Gate Resistance
©2002 Fairchild Semiconductor Corporation
10000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 40A
C
T = 25oC
C
T_C = 125^oC
1000
Eoff
Eon
10
100
Gate Resistance, R_G [Ω]
Fig 12. Switching Loss vs. Gate Resistance
FGL40N150D Rev. A1