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| FGL40N150D Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Electrical Characteristics of the IGBT | |||
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 3mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 40mA, VCE = VGE
IC = 40A, VGE = 15V
1500
--
--
--
--
V
--
3.0
mA
-- ± 100 nA
3.5
5.0
7.5
V
2.5
3.5
4.5
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 600 V, IC = 40A,
RG = 51â¦, VGE = 15V,
Resistive Load, TC = 25°C
VCE = 600 V, IC = 40A,
VGE = 15V
-- 2450 --
pF
--
220
--
pF
--
75
--
pF
--
100 200
ns
--
350 700
ns
--
200 400
ns
--
100 300
ns
--
110 170 nC
--
15
25
nC
--
40
60
nC
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
VFM
trr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Test Conditions
IF = 10A
IF = 10A, di/dt = 200A/us
Min.
--
--
Typ.
1.3
170
Max.
1.8
300
Units
V
ns
©2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
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