FGH40N6S2 Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted
200
DUTY CYCLE < 0.5%, V_CE = 10V
175 PULSE DURATION = 250µs
150
125
100
75
TJ = 25^oC
50
TJ = 125^oC
25
TJ = -55^oC
0
3
4
5
6
7
8
9 10 11 12
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
16
I_G(REF) = 1mA, R_L = 15Ω
14
12
V_CE = 600V
10
V_CE = 400V
8
6
4
V_CE = 200V
2
0
0
5
10
15
20
25
30
35
Q_G, GATE CHARGE (nC)
Figure 14. Gate Charge
2.4
R_G = 3Ω, L = 200µH, V_CE = 390V, V_GE = 15V
2.0 ^{ETOTAL = EON2 + EOFF}
100
T_J = 125^oC, L = 200µH, V_CE = 390V, V_GE = 15V
E_TOTAL = E_ON2 + E_OFF
1.6
I_CE = 40A
1.2
0.8
I_CE = 20A
0.4
I_CE = 10A
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 15. Total Switching Loss vs Case
Temperature
3.0
FREQUENCY = 1MHz
2.5
10
I_CE = 40A
1
I_CE = 20A
I_CE = 10A
0.1
1.0
10
100
R_G, GATE RESISTANCE (Ω)
1000
Figure 16. Total Switching Loss vs Gate
Resistance
4.0
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
3.6
2.0
C_IES
1.5
1.0
C_OES
0.5
C_RES
0.0
0
20
40
60
80
100
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
3.2
2.8
I_CE = 40A
2.4
I_CE = 20A
2.0
1.6
6
I_CE = 10A
7 8 9 10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5