FGH40N6S2 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted
1400
R_G = 3Ω, L = 200µH, V_CE = 390V
1200
1000
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
800
600
400
200
0
0
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
5
10 15 20 25 30 35 40
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
1400
R_G = 3Ω, L = 200µH, V_CE = 390V
1000
800
T_J = 125^oC, V_GE = 10V, V_GE = 15V
600
400
200
0
0
T_J = 25^oC, V_GE = 10V, V_GE = 15V
5
10 15 20 25 30 35 40
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
20
R_G = 3Ω, L = 200µH, V_CE = 390V
16
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
12
8
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
4
0
0
5
10 15 20 25 30 35 40
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
60
R_G = 3Ω, L = 200µH, V_CE = 390V
50
40
30
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
20
10
0
0
T_J = 25^oC, T_J = 125^oC, V_GE =15V
5
10 15 20 25 30 35 40
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
80
R_G = 3Ω, L = 200µH, V_CE = 390V
70
100
R_G = 3Ω, L = 200µH, V_CE = 390V
90
60
80
V_GE = 10V, V_GE = 15V, T_J = 125^oC
T_J = 125^oC, V_GE = 10V, V_GE = 15V
50
70
40
60
30
20
0
V_GE = 10V, V_GE = 15V, T_J = 25^oC
5
10 15 20 25 30 35 40
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
50
40
0
T_J = 25^oC, V_GE = 10V, V_GE = 15V
5
10 15 20 25 30 35 40
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5