FGH40N6S2 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted
90
PACKAGE LIMITED
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 1. DC Collector Current vs Case
Temperature
125
T_J = 150^oC, R_G = 3Ω, V_GE = 15V, L = 100µH
100
75
50
25
0
0
100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Minimum Switching Safe Operating Area
1000
T_{C =} 75^oC
100
f_MAX1 = 0.05 / (t_d(OFF)I + t_d(ON)I)
f_MAX2 = (P_D - P_C) / (E_ON2 + E_OFF)
P_C = CONDUCTION DISSIPATION
10
(DUTY FACTOR = 50%)
R_θJC = 0.27^oC/W, SEE NOTES
V_GE = 15V
V_GE = 10V
T_J = 125^oC, R_G = 3Ω, L = 200µH, V_CE = 390V
1
1
10
30
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 3. Operating Frequency vs Collector to
Emitter Current
13
500
V_CE = 390V, R_G = 3Ω, T_J = 125^oC
11
450
9
400
I_SC
7
350
5
300
t_SC
3
250
9
10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Short Circuit Withstand Time
40
DUTY CYCLE < 0.5%, V_GE =10V
35 ^{PULSE DURATION = 250µs}
30
25
20
15
T_J = 25^oC
10
T_J = 150^oC
5
T_J = 125^oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
40
DUTY CYCLE < 0.5%, V_GE =15V
35 ^{PULSE DURATION = 250µs}
30
25
20
15
T_J = 25^oC
10
T_J = 150^oC
5
T_J = 125^oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5