FGH40N6S2 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Package Marking and Ordering Information
Device Marking
40N6S2
40N6S2
40N6S2
40N6S2
Device
FGH40N6S2
FGP40N6S2
FGB40N6S2
FGB40N6S2T
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Reel Size
Tube
Tube
Tube
330mm
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800
Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BV_CES
BV_ECS
I_CES
I_GES
Collector to Emitter Breakdown Voltage I_C = 250µA, V_GE = 0
Emitter to Collector Breakdown Voltage I_C = -10mA, V_GE = 0
Collector to Emitter Leakage Current V_CE = 600V T_J = 25°C
T_J = 125°C
Gate to Emitter Leakage Current
V_GE = ± 20V
600
-
-
V
20
-
-
V
-
-
250
µA
-
-
2.0
mA
-
-
±250 nA
On State Characteristics
V_CE(SAT) Collector to Emitter Saturation Voltage I_C = 20A,
V_GE = 15V
T_J = 25°C
T_J = 125°C
-
1.9
2.7
V
-
1.7
2.0
V
Dynamic Characteristics
Q_G(ON) Gate Charge
V_GE(TH) Gate to Emitter Threshold Voltage
V_GEP Gate to Emitter Plateau Voltage
I_C = 20A,
V_CE = 300V
V_GE = 15V
V_GE = 20V
I_C = 250µA, V_CE = V_GE
I_C = 20A, V_CE = 300V
-
35
42
nC
-
45
55
nC
3.5
4.3
5.0
V
-
6.5
8.0
V
Switching Characteristics
SSOA Switching SOA
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
T_J = 150°C, V_GE = 15V, R_G = 3Ω 100
-
-
A
L = 100µH, V_CE = 600V
IGBT and Diode at T_J = 25°C,
I_CE = 20A,
V_CE = 390V,
V_GE = 15V,
R_G = 3Ω
L = 200µH
-
8.0
-
ns
-
10
-
ns
-
35
-
ns
-
55
-
ns
-
115
-
µJ
Test Circuit - Figure 26
-
200
-
µJ
-
195 260
µJ
IGBT and Diode at T_J = 125°C
I_CE = 20A,
V_CE = 390V,
V_GE = 15V,
R_G = 3Ω
L = 200µH
Test Circuit - Figure 26
-
14
-
ns
-
18
-
ns
-
68
85
ns
-
85
105
ns
-
115
-
µJ
-
380 450
µJ
-
375 600
µJ
Thermal Characteristics
R_θJC Thermal Resistance Junction-Case
TO-247
-
-
0.43 °C/W
NOTE:
2_ao._{sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduiO}ron_{Nd-2eOinstytplohesesistucsronpn-edocintifioileondsssinawrfehigesunhreoaw2tny6p.fiocratlhdeiocdoenvisenuiseendceinothf ethteesctircciurcituditeasnigdnethr.eEdOioNd1eisisthaet}
turn-on loss
the same T_J
3_tJh._{EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt} )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl _{otoowfretchrueDrrienevsnittcaeenqtTauunarenlso-OuzesffrpSoow(wIiCtecE}rhi=lnogs0sALso).tsaAsr.ltliTndhgeivsaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5