FGA90N30 Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 300V PDP IGBT

Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
C o m m o n E m itter
V = 15V, R = 10Ω
GE
G
T = 25^oC
C
T = 125^oC
C
tr
100
td (o n )
10
0
20
40
60
80
100
C o lle c to r C u rre n t , Ic [A ]
1000
tf
100
td (off)
C o m m o n E m itte r
V = 15V, R = 10Ω
GE
G
T = 25oC
C
T = 125^oC
C
10
0
20
40
60
80
C o lle cto r C u rre n t , Ic [A ]
100
Figure 15. Switching Loss vs. Gate Resistance Figure 16.Switching Loss vs. Collector Current
1
E off
0 .1
Eon
0 .0 1
0
C o m m o n E m itte r
V = 200V, V = 15V
CC
GE
I = 20A
C
T = 2 5oC
C
T = 125oC
C
20
40
60
80
100
G a te R e s ista n ce , R [Ω ]
G
10
1
E off
0 .1
0 .0 1
0
Eon
C o m m o n E m itte r
V = 15V, R = 10Ω
GE
G
T = 25^oC
C
T = 125^oC
C
20
40
60
80
100
C o lle cto r C u rre n t , Ic [A ]
Figure 17. Turn-Off SOA Figure
1000
Safe O perating Area
V = 20V, T = 100^oC
GE
C
100
10
1
10
100
Collector-Em itter Voltage, V [V]
CE
1000
FGA90N30 Rev. A
5
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