FGA90N30 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 300V PDP IGBT

Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. V_GE
Figure 8. Capacitance Charaacteristics
6
C o m m o n E m itte r
T = 125 oC
C
5
4
3
2
1
10A
20A
40A
90A
0
4
8
12
16
20
G a te - E m itte r V o lta g e , V [V ]
GE
1000
C ie s
Coes
C res
100
C o m m o n E m itte r
V = 0V, f = 1MHz
GE
T = 25oC
C
0 .1
1
10
C o lle cto r-E m itte r V o lta g e , V [V ]
CE
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
C o m m o n E m itte r
R = 10 ohm
L
T = 2 5 oC
C
10
Vcc = 200V
5
0
0
10 20 30 40 50 60 70 80 90
G a te C ha rge , Q [nC ]
g
Figure 11. Turn-On Characteristics vs. Gate
Resistance
1000
C om m o n E m itte r
V = 200V, V = 15V
CC
GE
I = 20A
C
T = 25oC
C
T = 125oC
C
tr
100
td (o n )
10
0
20
40
60
80
100
G a te R e sista n ce , R [Ω ]
G
Ic M AX (Pulsed)
100
Ic M AX (C ontinuous)
10
DC O peration
50μs
100μs
1ms
1
S ingle N onrepetitive
0.1 _{P ulse T c = 25}o_C
Curves m ust be derated
linearly with increase
in tem perature
0.01
0.1
1
10
100
C ollector - Em itter Voltage, V [V]
CE
1000
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
tf
100
td (o ff)
10
0
C o m m o n E m itte r
V = 200V, V = 15V
CC
GE
I = 20A
C
T = 25^oC
C
T = 125^oC
C
20
40
60
80
100
G a te R e s is ta n c e , R [Ω ]
G
FGA90N30 Rev. A
4
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