FGA90N30 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 300V PDP IGBT

FGA90N30
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V_CE(sat), Typ = 1.1V@ I_C = 20A
• High Input Impedance
September 2006
Description
Employing Unified IGBT Technology, FGA90N30 provides low
conduction and switching loss. FGA90N30 offers the optimum
solution for PDP applications where low condution loss is
essential.
GCE
TO-3P
Absolute Maximum Ratings _{TC = 25°C unless otherwise noted}
Symbol
Description
V_CES
V_GES
I_C
I_CM
P_D
T_J
T_stg
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 25°C
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Ambient
FGA90N30
300
± 30
90
220
219
87
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.57
40
Units
V
V
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FGA90N30 Rev. A
www.fairchildsemi.com