English
Language : 

FGA90N30 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 300V PDP IGBT
◁
Package Marking and Ordering Information
Device Marking
FGA90N30
Device
FGA90N30
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
ΔBVCES/
ΔTJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250μA
VGE = 0V, IC = 250μA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 20A, VGE = 15V
IC = 90A, VGE = 15V
IC = 90A, VGE = 15V,
TC = 125°C
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
300
--
--
V
--
0.6
--
V/°C
--
--
100
μA
--
--
± 250
nA
2.5
4.0
5.0
V
--
1.1
1.4
V
--
1.9
--
V
--
2.0
--
V
--
1700
-
pF
--
290
-
pF
--
80
-
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCC =200V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 20A,
VGE = 15V
--
30
--
ns
--
200
--
ns
--
110
--
ns
--
140
300
ns
--
0.15
--
mJ
--
0.45
--
mJ
--
0.6
--
mJ
--
30
--
ns
--
210
--
ns
--
110
--
ns
--
200
--
ns
--
0.16
--
mJ
--
0.72
--
mJ
--
0.88
--
mJ
--
87
130
nC
--
12
18
nC
--
38
57
nC
FGA90N30 Rev. A
2
www.fairchildsemi.com
 ▷