FGA25S125P Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
t_r
100
10
1
10
t_d(on)
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
20
30
40
50
Collector Current, I_C [A]
Figure 15. Switching Loss vs.
Gate Resistance
5000
E_on
1000
100
10
E_{off Common Emitter}
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
T_C = 175^oC
20 30 40 50 60 70
Gate Resistance, R_G [Ω]
Figure 17. Turn off Switching
SOA Characteristics
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
t_d(off)
t_f
100 ^{Common Emitter}
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
40
10
20
30
40
50
Collector Current, I_C [A]
Figure 16. Switching Loss vs.
Collector Current
10000
E_on
1000
100
10
Common Emitter
E_off
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
20
30
40
50
Collector Current, I_C [A]
Figure 18. Forward Characteristics
100
10
Safe Operating Area
V_GE = 15V, T_C = 175^oC
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
FGA25S125P Rev. C0
5
10
1
0.1
0
T_C = 25^oC
T_C = 175^oC
1
2
3
4
Forward Voltage, V_F [V]
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