FGA25S125P Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
T_C = 25^oC
20V
15V
160
VGE=17V
120
12V
80
10V
40
9V
8V
7V
0
0.0
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
V_GE = 15V
160 _{TC = 25}^o_C
T_C = 175^oC ---
120
Figure 2. Typical Output Characteristics
200
T_C = 175^oC
20V _17V
160
15V
120
80
40
0
0.0
12V
10V
V_GE = 7V
9V
8V
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
100
Common Emitter
V_CE = 20V
80 T_C = 25^oC
T_C = 175^oC
60
80
40
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
50A
2.5
2.0
25A
1.5
I_C = 12.5A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
15
10
25A
I_C = 12.5A
50A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGA25S125P Rev. C0
3
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