FGA25S125P Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Package Marking and Ordering Information
Device Marking
FGA25S125P
Device
FGA25S125P
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
I_CES
I_GES
Collector Cut-Off Current
G-E Leakage Current
V_CE = 1250V, V_GE = 0V
V_GE = V_GES, V_CE = 0V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat) Collector to Emitter Saturation Voltage
V_FM
Diode Forward Voltage
I_C = 25mA, V_CE = V_GE
I_C = 25A, V_GE = 15V
T_C = 25^oC
I_C = 25A, V_GE = 15V
T_C = 125^oC
I_C = 25A, V_GE = 15V,
T_C = 175^oC
I_F = 25A, T_C = 25^oC
I_F = 25A, T_C = 175^oC
-
-
1
mA
-
-
±500
nA
4.5
6.0
7.5
V
-
1.8
2.35
V
-
2.05
-
V
-
2.16
-
V
-
1.7
2.4
V
-
2.1
-
V
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V_CE = 30V_, V_GE = 0V,
f = 1MHz
V_CC = 600V, I_C = 25A,
R_G = 10Ω, V_GE = 15V,
Resistive Load, T_C = 25^oC
V_CC = 600V, I_C = 25A,
R_G = 10Ω, V_GE = 15V,
Resistive Load,, T_C = 175^oC
V_CE = 600V, I_C = 25A,
V_GE = 15V
-
2150
-
pF
-
48
-
pF
-
36
-
pF
-
24
-
ns
-
250
-
ns
-
502
-
ns
-
138
179
ns
-
1085
-
uJ
-
580
754
uJ
-
1665
-
uJ
-
21.2
-
ns
-
304
-
ns
-
490
-
ns
-
232
-
ns
-
1310
-
uJ
-
952
-
uJ
-
2262
-
uJ
-
204
-
nC
-
15
-
nC
-
103
-
nC
FGA25S125P Rev. C0
2
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