FGA25S125P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

FGA25S125P
Shorted Anode^TM IGBT
Features
• High speed switching
• Low saturation voltage: V_CE(sat) =1.8V @ I_C = 25A
• High input impedance
• RoHS compliant
Applications
• Induction Heating and Microwave Oven
• Soft Switching Applications
November 2012
General Description
Using advanced Field Stop Trench and Shorted Anode
technology, Fairchild’s Shorted Anode^TM Trench IGBTs offer
superior conduction and switching performances, and easy
parallel operation with exceptional avalanche capability . This
device is desingned for induction heating and microwave oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
G
E
Rating
1250
± 25
50
25
75
50
25
250
125
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
0.6
40
Units
V
V
A
A
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FGA25S125P Rev. C0
www.fairchildsemi.com