SI6955DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = -3.6A
8
6
V_DS = -5V
-10V
-15V
4
2
0
0
1.6
3.2
4.8
6.4
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
R_DS(ON) LIMIT
1
V_GS = -10V
SINGLE PULSE
0.1
R_θJA = 125^oC/W
T_A = 25^oC
10µs
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
400
f = 1 MHz
C_ISS
V_GS = 0 V
300
200
C_OSS
100
C_RSS
0
0
6
12
18
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R_θJA = 125°C/W
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R_θJA(t) = r(t) * R_θJA
R_θJA = 125^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6955DQ Rev C(W)