SI6955DQ Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –24 V,
VGS = –20 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
–30
–22
V
mV/°C
–1
µA
–100 nA
100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–1 –1.9 –3
V
4
mV/°C
VGS = –10 V, ID = –2.5 A
64
85
mΩ
VGS = –4.5 V, ID = –1.8 A
101 190
VGS = –10 V, ID = –2.5 A, TJ=125°C
96 128
VGS = –10 V, VDS = –5 V
–15
A
VDS = –10V, ID = –2.5 A
6
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
298
pF
83
pF
39
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –10V,
VGS = –10 V
ID = –2.5 A,
6
15
ns
13
18
ns
11
27
ns
6
15
ns
6
15
nC
1
nC
1.2
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.83 A (Note 2)
Voltage
–0.83 A
–0.8 –1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 100°C/W when
mounted on a 1in² pad
of 2 oz copper for
single operation and
81°C/W for dual
operation.
b) 125°C/W when mounted
on a minimum pad of 2 oz
copper for single operation
and 104°C/W for dual
operation.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6955DQ Rev C(W)