SI6955DQ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

January 2002
Si6955DQ
Dual 30V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild's Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Load switch
• Battery protection
• DC/DC conversion
• Power management
Features
• –2.5 A, –30 V,
RDS(ON) = 85 mΩ @ VGS = –10 V.
RDS(ON) = 190 mΩ @ VGS = –4.5V.
• Extended VGSS range (±20V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6955
Si6955DQ
13’’
1
2
3
4
Ratings
–30
±20
–2.5
–20
1.0
0.6
-55 to +150
100
125
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
Si6955DQ Rev C(W)