SI6955DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

Typical Characteristics
15
V_GS = -10V _{-6.0V -5.0V}
12
-4.5V
9
-4.0V
6
-3.5V
3
0
0
1
2
3
4
5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = -3.6A
V_GS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
10
V_DS = -5V
8
6
T_A = -55^oC
25^oC
125^oC
4
2
0
1.5
2.5
3.5
4.5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
V_GS = -4.5V
1.6
-5.0V
1.4
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
3
6
9
12
15
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
I_D = -1.8A
0.25
0.2
0.15
T_A = 125^oC
0.1
T_A = 25^oC
0.05
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V_GS = 0V
1
0.1
0.01
T_A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6955DQ Rev C(W)