SI6923DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

Typical Characteristics
5
ID = -3.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
3
6
9
12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1800
1500
1200
900
600
300
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
1
TJ = 100^oC
0.1
0.0 1
TJ = 25^oC
0 .001
0
0 .2
0 .4
0.6
0 .8
1
1.2
VF, FORW ARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
0.01
0.001
0.0001
0.00001
0.000001
0.0000001
0.00000001
0
T_J = 125^oC
T_J = 25^oC
5
10
15
20
V R, REV ERSE V OLTA GE (V )
Figure 10. Schottky Diode Reverse Current.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
Si6923DQ Rev. A (W)