SI6923DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

Typical Characteristics
30
VGS = -4.5V
24
-4.0V _-3.5V
-3.0V
18
12
-2.5V
6
-2.0V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
VGS = -2.5V
1.4
1.2
-3.0V
-3.5V
-4.0V
1
-4.5V
0.8
0
5
10
15
20
25
30
- ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -3.5A
VGS = -4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.15
0.12
0.09
0.06
0.03
0
1.5
ID = -1.7A
TA = 125^oC
TA = 25^oC
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = -5V
24
18
TA = -55^oC
25^oC
125^oC
12
6
0
0.4
1.3
2.2
3.1
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
TA = 125^oC
25^oC
0.01
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6923DQ Rev. A (W)