SI6923DQ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

April 2001
Si6923DQ
P-Channel 2.5V Specified PowerTrench^ MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
• DC/DC conversion
Features
• –3.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V
RDS(ON) = 0.075 Ω @ VGS = –2.5 V
• V_F < 0.55 V @ 1 A
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
A
A
A
C
TSSOP-8
G
S
S
D
Pin 1
5
4
6
3
7
2
8
1
MOSFET Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
MOSFET Power Dissipation (minimum pad) (Note 1)
Schottky Power Dissipation (minimum pad) (Note 1)
Operating and Storage Junction Temperature Range
Ratings
–20
± 12
–3.5
–30
1.2
1.0
-55 to +150
Schottky Maximum Ratings
VRRM
Repetitive Peak Reverse Voltage
20
IF
Average Forward Current
1.5
IFM
Peak Forward Current
30
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6923
Si6923DQ
13’’
Tape width
16mm
Units
V
V
A
W
°C
V
A
A
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si6923DQ Rev. A(W)