SI6923DQ Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
–20
ID = –250 µA, Referenced to25°C
VDS = –16 V,
VGS = –12 V,
VGS = 12 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–0.6
ID = –250 µA, Referenced to25°C
VGS = –4.5 V, ID = –3.5 A
VGS = –2.5 V, ID = –2.7 A
VGS=–4.5 V, ID =–3.5A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
–15
VDS = –5 V,
ID = –3.5A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –5 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –5V,
VGS = –4.5 V
ID = –3.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.25 A (Note 2)
IGSSR
Gate–Body Leakage, Reverse
VGS = 12 V, VDS = 0 V
Schottky Diode Characteristics
IR
Reverse Leakage
VF
Forward Voltage
CT
Junction Capacitance
VR = 20V
IF = 1A
VR = 10V
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
V
–16
mV/°C
–1
µA
–100 nA
100 nA
–1.0 –1.5
V
3
mV/°C
36
45
mΩ
56 75
49 72
A
13.2
S
1015
pF
446
pF
118
pF
11 20
ns
18 32
ns
34 55
ns
34 55
ns
9.7 16
nC
2.2
nC
2.4
nC
–1.25 A
–0.6 –1.2
V
100 nA
0.6 50
µA
1
8
mA
0.48 0.55
V
0.42 0.50
V
50
pF
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
R_θJA is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6923DQ Rev. A (W)