SI4925DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Dual P-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical Characteristics (continued)
10
ID = -6A
8
6
V _DS = -5V
-15V
-10V
4
2
0
0
6
12
18
24
30
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
10
RDS(ON) ^LIMIT
3
0.5
VGS = -10V
SINGLE PULSE
0.05
RθJA =135°C/W
TA = 25°C
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
0.3
1
2
5 10
- V_DS , DRAIN-SOURCE VOLTAGE (V)
30 50
Figure 9. Maximum Safe Operating Area.
3000
2000
1000
500
C iss
Coss
200 _{f = 1 MHz}
V_GS = 0 V
C rss
100
0.1
0.2
0.5
1
2
5
10
- V_DS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
0.1
0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 135°C/W
P(pk)
t_{1 t 2}
T_J - T_A = P * R _θJA(t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4925DY Rev.A