SI4925DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Dual P-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical Characteristics
30
VGS = -10V
-6.0V
24
-4.5V
18
-3.5V
12
-3.0V
6
0
0
1
2
3
4
5
- V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D= -6A
1.4 ^{VGS = -10V}
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation with
Temperature.
30
V _DS = -5.0V
24
18
T_J= -55° C
25° C
125° C
12
6
0
1.5
2
2.5
3
3.5
4
4.5
- V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
2 ^V GS ^{= -3.5V}
-4.0 V
1.5
-4.5 V
-5.5 V
-7.0 V
1
-10V
0.5
0
6
12
18
24
30
- I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.1
0.08
I D = -3A
0.06
0.04
0.02
0
2
TA = 125°C
25° C
4
6
8
10
- V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
10 ^VGS ^{= 0V}
TJ = 125° C
1
25° C
0.1
-55° C
0.01
0.001
0
0.3
0.6
0.9
1.2
1.5
- V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4925DY Rev.A