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SI4925DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Dual P-Channel, Logic Level, PowerTrench MOSFET
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Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter
Conditions
OFF CHARACTERISTICS
Min Typ Max Units
BVDSS
∆BVDSS/∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, I D = -250 µA
ID = -250 µA, Referenced to 25 oC
-30
-21
V
mV/oC
VDS = -24 V, VGS = 0 V
-1
µA
TJ = 55°C
-10
µA
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = 16 V, VDS = 0 V
VGS = -16 V, VDS = 0 V
100
nA
-100 nA
VGS(th)
∆VGS(th)/∆TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
VGS = -10 V, I D = -6 A
-1 -1.7
4
-3
V
mV/oC
0.025 0.032
Ω
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
TJ =125°C
0.033 0.051
VGS = -4.5 V, I D = -5 A
0.034 0.045
VGS = -10 V, VDS = -5 V
-20
A
VDS = -10 V, I D = -6 A
16
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
1540
pF
400
pF
170
pF
tD(on)
Turn - On Delay Time
VDS = -15 V, I D = -1 A
tr
Turn - On Rise Time
VGEN = -10 V, RGEN = 6 Ω
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
VDS = -10 V, I D = -6 A,
Qgs
Gate-Source Charge
VGS = -5 V
Qgd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
13
24
ns
22
35
ns
47
75
ns
18
30
ns
14.5 20
nC
4
nC
5
nC
IS
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.3 A (Note 2)
-0.73 -1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
Si4925DY Rev.A
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