SI4835DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

Typical Characteristics (continued)
10
I_D = -8.8A
8
6
4
2
0
0
5
V_DS = -5V
-10V
-15V
10
15
20
25
30
35
Q_g, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
R_θJA = 125^oC/W
TA = 25^oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
2500
2000
1500
1000
500
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
25
30
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
40
R_θJA = 125^oC/W
TA = 25^oC
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5
0.2
0.1
0. 0 5
0. 0 2
0. 0 1
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
0.0 2
0. 0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 . 00 0 1
0 .0 0 1
0.01
0.1
1
t ₁, TIM E (s e c )
R _θJ A (t) = r(t) * R _{θJ A}
R _{θJ A}= 125°C /W
P(pk )
t1 _{t 2}
T_J - T_A = P * R_θJA ( )t
D u t y C y c l e, D = t ₁ /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si4835DY Rev. A