SI4835DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = -250 µA
-30
V
∆BVDSS
∆TJ
I_DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I_D = -250 µA,Referenced to 25°C
V_DS = -24 V, V_GS = 0 V
-24
mV/°C
-1
µA
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 25 V, V_DS = 0 V
100 nA
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -25 V, V_DS = 0 V
-100 nA
On Characteristics (Note 2)
V_GS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
R_DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I_D(on)
On-State Drain Current
g_FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
-1
-2
-3
V
I_D = -250 µA,Referenced to 25°C
5
mV/°C
V_GS = -10 V, I_D = -8.8 A
0.015 0.020 Ω
V_GS = -10 V, I_D = -8.8 A,T_J=125°C
0.023 0.032
V_GS = -4.5 V, I_D = -6.7 A
0.026 0.035
V_GS = -10 V, V_DS = -5 V
-25
A
V_DS = -10 V, I_D = -8.8 A
20
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = -15 V, V_GS = 0 V,
f = 1.0 MHz
1680
pF
545
pF
220
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
(Note 2)
V_DD = -15 V, I_D = -1 A,
V_GS = -10 V, R_GEN = 6 Ω
V_DS = -10 V, I_D = -8.8 A,
V_GS = -5 V,
12 22
ns
15 27
ns
55 90
ns
23 37
ns
19 27
nC
6.8
nC
7.2
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = -2.1 A
(Note 2)
-2.1
A
-0.52 -1.2
V
Notes:
1: R_θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R_θJC is guaranteed by design while R_θJA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in²
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in²
pad of 2 oz. copper.
c) 125° C/W on a minimum
mounting pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4835Dy Rev. A