SI4835DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

Typical Characteristics
50
VGS = -10V
40 ^-7.0V
-6.0V
-5.0V
-4.5V
30
20
-4.0V
10
-3.5V
0
0
1
2
3
4
5
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
ID = -8.8A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
with Temperature
50
V_DS = -5V
40
T_A = -55^oC
25^oC
125^oC
30
20
10
0
1
2
3
4
5
6
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2.6
2.4
2.2 ^VGS ^{= -4.0V}
2
1.8
-4.5V
1.6
-5.0V
1.4
-6.0V
1.2
-7.0V
-8.0V
1
-10V
0.8
0
10
20
30
40
50
-I_D, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
0.06
0.05
0.04
0.03
0.02
0.01
0
3
ID = -4.4A
TA = 125^oC
TA = 25^oC
4
5
6
7
8
9
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
100
V_GS = 0V
10
1
0.1
0.01
T_A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Si4835DY Rev. A