SI4835DY Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

January 2001
Si4835DY
P-Channel Logic Level PowerTrench^ MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery protection
• Load switch
• Motor drives
Features
• -8.8 A, -30 V. R_DS(ON) = 0.020 Ω @ V_GS = -10 V
R_DS(ON) = 0.035 Ω @ V_GS = -4.5 V
± • Extended V_GSS range ( 25V) for battery applications.
• Low gate charge (19nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
5
D
D
6
7
G
SS
8
SO-8 S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ_JA
Thermal Resistance, Junction-to-Ambient
Rθ_JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
4
3
2
1
Ratings
-30
±25
-8.8
-50
2.5
1.2
1
-55 to +150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Si4835DY
4835
13’’
Tape Width
12mm
Quantity
2500 units
2001 Fairchild Semiconductor International
Si4835DY Rev. A