SI4822DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical And Thermal Characteristics
10
I _D = 12.5A
8
6
V_DS = 5V
10V
15V
4
2
0
0
10
20
30
40
50
60
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
4000
Ciss
2000
1000
Coss
400
Crss
200 f = 1 MHz
V_GS = 0 V
100
0.1 0.2
0.5
1
2
5
10
30
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
30
RDS(ON) ^LIMIT
10
3
1
V_GS =10V
0.1 ^{SINGLE PULSE}
R_θJ_TAA=_{A=12255°°CC/W}
100us
1ms
10ms
1¹_s^00ms
10s
DC
0.01
0.05 0.1
0.5 1 2
5 10
30 50
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
50
40
30
20
10
0
0.001
SINGLE PULSE
R_θJA =125°C/W
T_A = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 125°C/W
P(pk)
t1
t₂
T_J - T_A = P * R _θJA(t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve .
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4822DY Rev.A