SI4822DY Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

January 2001
Si4822DY
Single N-Channel, Logic Level, PowerTrench^® MOSFET
GeneralDescription
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
12.5 A, 30 V. R_DS(ON) = 0.0095 Ω @ V_GS = 10 V
R_DS(ON) = 0.013 Ω @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for
extremely low R_DS(ON).
High power and current handling capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
D
5
D
D
D
4822
6
7
G
S
SO-8
pin 1
S
8
S
Absolute Maximum Ratings
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
T_A = 25^oC unless other wise noted
(Note 1a)
P_D
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 2001 Fairchild Semiconductor International
Si4822DY
30
±20
12.5
50
2.5
1.2
1
-55 to 150
50
25
SOIC-16
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Si4822DY Rev.A