SI4822DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical Characteristics
50
V_GS = 10V _4.5V
40 ^6.0V
4.0V
3.5V
30
20
3.0V
10
2.5V
0
0
0.5
1
1.5
2
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
I_D = 12.5A
1.6 ^V GS ^{= 10V}
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS =5.0V
40
30
TJ = -55°C
25°C
125°C
20
10
0
1
2
3
4
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5 . Transfer Characteristics.
3
V _GS= 3.0V
2.5
2
3.5 V
4.0 V
1.5
4.5 V
5.5V
7.0V
1
10V
0
10
20
30
40
50
I_D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
I _D = 6.3A
0.03
0.02
0.01
0
2
125°C
25°C
4
6
8
10
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
40
10 ^{VGS= 0V}
1
0.1
TJ = 125°C
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4822DY Rev.A