SI4822DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

Electrical Characteristics (T_A = 25 ^OC unless otherwise noted )
Symbol
Parameter
Conditions
Min Typ
Max Units
OFF CHARACTERISTICS
BV_DSS
∆BV_DSS/∆T_J
I_DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
I_GSSF
Gate - Body Leakage, Forward
I_GSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
∆V_GS(th)/∆T_J
V_GS(th)
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
R_DS(ON)
Static Drain-Source On-Resistance
I_D(ON)
On-State Drain Current
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
V_GS = 0 V, I _D = 250 µA
I_D = 250 µA, Referenced to 25 ^oC
30
33
V
mV / ^oC
V_DS = 24 V, V_GS = 0 V
1
µA
T_J = 55°C
10
µA
V_GS = 20 V, V_DS = 0 V
100
nA
V_GS = -20 V, V_DS= 0 V
-100 nA
I_D = 250 µA, Referenced to 25 ^oC
V_DS = V_GS, I_D = 250 µA
T_J =125°C
V_GS = 10 V, I _D = 12.5 A
V_GS = 4.5 V, I _D = 10.5 A
V_GS = 10 V, V_DS = 5 V
V_DS = 15 V, I _D= 12.5 A
T_J =125°C
-4.5
mV /^oC
1
1.6
3
V
0.8 1.3 2.4
0.008 0.0095 _Ω
0.012 0.016
0.0105 0.013
25
A
35
S
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
V_DS = 15 V, V_GS = 0 V,
f = 1.0 MHz
2180
pF
500
pF
255
pF
t_D(on)
Turn - On Delay Time
V_DS= 10 V, I _D= 1 A
t_r
Turn - On Rise Time
V_GS = 10 V , R_GEN = 6 Ω
t_D(off)
Turn - Off Delay Time
t_f
Turn - Off Fall Time
Q_g
Total Gate Charge
V_DS = 15 V, I _D = 12.5 A,
Q_gs
Gate-Source Charge
V_GS= 5 V
Q_gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
13
24
ns
14
26
ns
43
70
ns
15
27
ns
23
33
nC
7
nC
11
nC
I_S
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 2.1 A (Note 2)
0.72 1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is
guaranteed by design while R_θCA is determined by the user's board design.
a. 50^OC/W on a 1 in² pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 105^OC/W on a 0.04 in²
pad of 2oz copper.
c. 125^OC/W on a 0.006 in² pad
of 2oz copper.
Si4822DY Rev.A