SI4480DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

Typical Characteristics (continued)
10
I_D = 7.6A
8
6
V_DS = 10V
20V
40V
4
2
0
0
5
10
15
20
25
30
35
Q_g, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = 10V
0.1
SINGLE PULSE
R_θJA = 125^oC/W
T_A = 25^oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
2000
1600
C_ISS
f = 1MHz
V_GS = 0 V
1200
800
400
C_OSS
C_RSS
0
0
10
20
30
40
50
60
70
80
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
R_θJA =125°C/W
T_A = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0. 0 5
0. 0 2
0. 0 1
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
0.0 2
0. 0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 . 00 0 1
0 .0 0 1
0.01
0.1
1
t ₁, TIM E (s e c )
R _θJ A (t) = r(t) * R _{θJ A}
R _{θJ A}= 125°C /W
P(pk )
t1 _{t 2}
T_J - T_A = P * R_θJA ( )t
D u t y C y c l e, D = t ₁ /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si4480DY Rev A