SI4480DY Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

January 2001
Si4480DY
80V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
• 7.6 A, 80 V. R_DS(ON) = 0.029 Ω @ V_GS = 10 V
R_DS(ON) = 0.033 Ω @ V_GS = 6 V.
• Low gate charge (34nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
5
D
D
6
G
7
SS
8
SO-8 S
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Ratings
80
±²⁰
7.6
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
4480
Si4480DY
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
2500 units
2001 Fairchild Semiconductor International
Si4480DY Rev. A