SI4480DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W_DSS
Single Pulse Drain-Source
Avalanche Energy
V_DD = 40 V, I_D = 7.6 A
I_AR
Maximum Drain-Source Avalanche Current
245 mJ
7.6
A
Off Characteristics
BV_DSS
Drain-Source Breakdown Voltage
∆_BVDSS
∆_TJ
I_DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I_GSSF
Gate-Body Leakage, Forward
I_GSSR
Gate-Body Leakage, Reverse
V_GS = 0 V, I_D = 250 ^µA
80
I_D = 250 ^µA, Referenced to 25^°C
V_DS = 64 V, V_GS = 0 V
V_GS = 20 V, V_DS = 0 V
V_GS = -20 V, V_DS = 0 V
V
81
mV/^°C
1
µ_A
100 nA
-100 nA
On Characteristics (Note 2)
V_GS(th)
Gate Threshold Voltage
∆_VGS(th)
∆_TJ
Gate Threshold Voltage
Temperature Coefficient
R_DS(on)
Static Drain-Source
On-Resistance
I_D(on)
On-State Drain Current
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 ^µA
2
2.5
4
V
I_D = 250 ^µA, Referenced to 25^°C
-7
mV/^°C
V_GS = 10 V, I_D = 7.6 A
0.022 0.029 Ω
V_GS = 10 V, I_D = 7.6 A, T_J=125^°C
0.037 0.055
V_GS = 6 V, I_D = 7 A
0.024 0.033
V_GS = 10 V, V_DS = 5 V
30
A
V_DS = 5 V, I_D = 7.6 A
28
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
1800
pF
180
pF
90
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
(Note 2)
V_DD = 40 V, I_D = 1 A,
V_GS = 10 V, R_GEN = 6 ^Ω
V_DS = 40 V, I_D = 7.6 A,
V_GS = 10 V
13 26
ns
8
20
ns
34 60
ns
16 30
ns
34
46
nC
6.1
nC
6.9
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 2.1 A
(Note 2)
0.74 1.2
V
Notes:
1: R_θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in²
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in²
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4480DY Rev A