SI4480DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

Typical Characteristics
60
V_GS = 10V
50
6.0V
5.0V
4.5V
40
30
20
4.0V
10
0
0
3.5V
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
I_D = 7.6A
V_GS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
with Temperature.
60
V_DS = 5V
50
40
T_A = -55^oC
25^oC
125^oC
30
20
10
0
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
V_GS = 4.0V
1.6
1.4
4.5V
5.0V
1.2
6.0V _{7.0V 10V}
1
0.8
0
10
20
30
40
50
60
I_D, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
0.05
0.04
I_D = 3.8A
T_A = 125^oC
0.03
0.02
0.01
T_A = 25^oC
0
3
4
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
V_GS = 0V
10
1
T_A = 125^oC
0.1
0.01
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
Si4480DY Rev A