SI4435DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = -8.8A
8
V_DS = -5V
-10V
-15V
6
4
2
0
0
6
12
18
24
30
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
100µ s
1ms
10ms
1
V_GS = -10V
0.1 ^{SINGLE PULSE}
R_θJA = 125^oC/W
T _A = 25^oC
100ms
1s
10s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2500
2000
1500
C_ISS
f = 1 MHz
V_GS = 0 V
1000
500
C_OSS
C_RSS
0
0
5
10
15
20
25
30
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R_θJA = 125°C/W
40
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 125^oC/W
P(pk)
t1
TJ - TA = Pt² * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
SI4435DY Rev D1(W)