SI4435DY Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

October 2001
SI4435DY
30V P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –8.8 A, –30 V
RDS(ON) = 20 mΩ @ VGS = –10 V
RDS(ON) = 35 mΩ @ VGS = –4.5 V
• Low gate charge (17nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1SO-8 ^{SS SS SS GG}
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
SI4435DY
SI4435DY
13’’
©2001 Fairchild Semiconductor Corporation
5
4
6
3
7
2
8
1
Ratings
–30
±20
–8.8
–50
2.5
1.2
1
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
SI4435DY Rev D1(W)