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SI4435DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET | |||
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
DrainâSource Breakdown Voltage VGS = 0 V, ID = â250 µA
â30
V
âBV DSS
âTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = â250 µA, Referenced to 25°C
VDS = â24 V, VGS = 0 V
â21
mV/°C
â1
µA
IGSSF
GateâBody Leakage, Forward
VGS = 20 V, VDS = 0 V
100 nA
IGSSR
GateâBody Leakage, Reverse
VGS = â20 V, VDS = 0 V
â100 nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
âV GS(th)
âTJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static DrainâSource
OnâResistance
ID(on)
OnâState Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = â250 µA
â1 â1.7 â3
V
ID = â250 µA, Referenced to 25°C
5
mV/°C
VGS = â10 V, ID = â8.8 A
VGS = â4.5 V, ID = â6.7 A
VGS= â10 V, ID = â8.8A, TJ=125°C
15 20 mâ¦
22 35
19 32
VGS = â10 V, VDS = â5 V
â40
A
VDS = â5 V,
ID = â8.8 A
24
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = â15 V, V GS = 0 V,
f = 1.0 MHz
1604
pF
408
pF
202
pF
Switching Characteristics
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg
Total Gate Charge
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
(Note 2)
VDD = â15 V,
VGS = â10 V,
ID = â1 A,
RGEN = 6 â¦
VDS = â15 V, ID = â8.8 A,
VGS = â5 V
13 23
ns
13.5 24
ns
42 68
ns
25 40
ns
17 24
nC
5
nC
6
nC
DrainâSource Diode Characteristics and Maximum Ratings
IS
Maximum Continuous DrainâSource Diode Forward Current
VSD
DrainâSource Diode Forward
Voltage
VGS = 0 V, IS = â2.1 A (Note 2)
â2.1 A
â0.73 â1.2 V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
SI4435DY Rev D1(W)
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