SI4435DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

Typical Characteristics
50
V_GS = -10V
-6.0V
-4.5V
40
V
-4.0V
30
-3.5V
20
-3.0V
10
0
0
1
2
3
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = -8.8A
V_GS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150 175
T _J, JUNCTION TEMPERATURE ( ^oC)
Figure 3. On-Resistance Variation with
Temperature.
40
V_DS = -5V
30
20
T _A = -55^oC
25^oC
125^oC
10
0
1.5
2
2.5
3
3.5
4
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
1.6
1.4
1.2
1
0.8
0
V_GS=-4.5V
-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
10
20
30
40
50
-I _D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
0.06
I_D = -4.4A
0.05
0.04
0.03
T_A = 125 ^oC
0.02
T _A = 25^oC
0.01
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS =0V
10
1
0.1
0.01
T _A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
SI4435DY Rev D1(W)