RFG70N06 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Typical Performance Curves (Continued)
PULSE DURATION = 250µs, V_GS = 10V, I_D = 70A
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
V_GS = V_DS, I_D = 250µA
0.0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED r_DS(ON) vs JUNCTION
TEMPERATURE
0.0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
I_D = 250µA
1.2
2.0
1.0
1.5
0.8
1.0
0.6
0.4
0.5
0.2
0.0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0.0
0
25
50
75
100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
5000
V_GS = 0V, FREQUENCY (f) = 1MHz
4000
3000
C_ISS
2000
1000
0
0
C_OSS
C_RSS
5
10
15
20
25
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
60
V_DD = BV_DSS
45
10
V_DD = BV_DSS
7.5
30
5.0
0.75 BV_DSS
0.50 BV_DSS
15
0.25 BV_DSS
2.5
R_L = 0.86Ω
I_G(REF) = 2.2mA
V_GS = 10V
0
0
20-_II-_GG-----₍₍--_AR---_CE----^FT---⁾⁾- t, TIME (µs)
80 _I-^I-_GG-----₍₍--_AR---_CE----^FT---⁾⁾-
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
3-54