RFG70N06 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

SEMICONDUCTOR
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
December 1995
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Features
• 70A, 60V
• r_DS(on) = 0.014Ω
• Temperature Compensated PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175^oC Operating Temperature
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06
TO-262AA
F1S70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Formerly developmental type TA49007.
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-263AB
M
A
GATE
SOURCE
DRAIN
(FLANGE)
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation
T_C = +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate above +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_STG, T_J
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM
60
60
±20
70
Refer to Peak Current Curve
Refer to UIS Curve
150
1.0
-55 to +175
UNITS
V
V
V
A
W
W/^oC
o_C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-51
File Number 3206.3