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| RFG70N06 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs | |||
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Speciï¬cations RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Electrical Speciï¬cations TC = +25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
ID = 250µA, VGS = 0V
60
-
-
V
VGS(TH)
VGS = VDS, ID = 250µA
2
IDSS
VDS = 60V,
TC = +25oC
-
VGS = 0V
TC = +150oC
-
-
4
V
-
1
µA
-
50
µA
IGSS
VGS = ±20V
-
-
100
nA
rDS(ON)
ID = 70A, VGS = 10V
-
-
0.014
â¦
tON
tD(ON)
tR
VDD = 30V, ID = 70A
RL = 0.43â¦, VGS = +10V
RGS = 2.5â¦
-
-
125
ns
-
12
-
ns
-
50
-
ns
tD(OFF)
-
40
-
ns
tF
-
15
-
ns
tOFF
-
-
125
ns
QG(TOT)
QG(10)
QG(TH)
VGS = 0V to 20V VDD = 48V,
ID = 70A,
VGS = 0V to 10V RL = 0.68â¦
VGS = 0V to 2V
-
185
215
nC
-
100
115
nC
-
5.5
6.5
nC
CISS
COSS
VDS = 25V, VGS = 0V
f = 1MHz
-
3000
-
pF
-
900
-
pF
CRSS
RθJC
RθJA
-
300
-
pF
-
-
1.0
oC/W
-
-
80
oC/W
Source-Drain Diode Speciï¬cations
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
tRR
TEST CONDITIONS
ISD = 70A
ISD = 70A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
3-52
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