RFG70N06 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Typical Performance Curves
T_C = +25^oC
500
100
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
V_DSS
MAX = 60V
1
1
10
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
10ms
100ms
DC
100
FIGURE 1. SAFE OPERATING AREA CURVE
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
2
1
0.5
0.2
0.1 ^0.1
P_DM
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
10^-3
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
10^-2
10^-1
10⁰
10¹
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
1000
T_C = +25^oC
FOR TEMPERATURES
ABOVE +25^oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I25_
-1---7---51----5-^–--0--T----^C---_{}
V_GS = 10V
100 _{TRANSCONDUCTANCE}
MAY LIMIT CURRENT
IN THIS REGION
50
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
PULSE DURATION = 250µs, T_C = +25^oC
200
V_GS = 20V V_GS = 10V
V_GS = 8V
V_GS = 7V
160
120
V_GS = 6V
80
40
0
0
V_GS = 5V
V_GS = 4.5V
1.0
2.0
3.0
4.0
5.0
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
200
PULSE TEST
PULSE DURATION = 250µs
160 ^{DUTY CYCLE = 0.5% MAX}
-55^oC
120
V_DD = 15V
+25^oC
+175^oC
80
40
0
0
2.0
4.0
6.0
8.0
10.0
V_GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
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