RFD14N05LSM9A Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

RFD14N05L, RFD14N05LSM, RFP14N05L
Typical Performance Curves Unless Otherwise Specified (Continued)
50
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS-V_DD) +1]
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
35
V_GS = 10V
30
25
20
15
10
V_GS = 5V
V_GS = 4.5V
V_GS = 4V
PULSE DURATION = 80µs, T_C = 25^oC
DUTY CYCLE = 0.5% MAX.
V_GS = 3V
5
V_GS = 2.5V
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
35
-55^oC
30
25^oC
175^oC
25
20
15
10
PULSE DURATION = 80µs
5
DUTY CYCLE = 0.5% MAX.
V_DD = 15V
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
250
I_D = 7A I_D = 14A
I_D = 28A
200
150
100 ^ID ^{= 3.5A}
50
0
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
3.0
3.5
4.0
4.5
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
160
V_DD = 25V, I_D = 14A, R_L = 3.57Ω
140
t_d(OFF)
120
100
t_r
80
t_f
60
40
20
0
0
t_d(ON)
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
2.0 ^{VGS = 10V, ID = 14A}
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2004 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1